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SAMSUNG SEMICONDUCTOR. DATA BOOK LIST'. I. Semiconductor Product Guide. II. Transistor Data Book. < Vol. 1: Small Signal TR. Vol. 2: Bipolar Power. The Engineering Staff of. TEXAS INSTRUMENTS INCORPORATED. Components Group. S(%6. The. Transistor and Diode. Data Book for. Design Engineers. From the earliest days of transistors, semiconductor circuit designers have needed In this a~O-page data book, Texas Instruments is pleased to catalog.
Switching Times 1. Kaisar Syed. Turn—On Time Figure 8. RB and RC were 10 varied to obtain desired test conditions. Both limits are applicable and must be observed. Allowable current at the voltage shown on Figure
ON Semiconductor has a commitment to quality and total customer satisfaction. TOAA 4. Isolated 1. TOAA 0.
Note 4. Note 3. Note 5. Darlington 5. Switching tests performed with special application simulator circuit. See data sheet for details. Note Note 9. Note 8.
Darlington BD BD 15 min 4. Notes Case 77, Style 3. Darlington http: When 2 voltages are given. For a complete discussion see Application Note AN The final choice of the Power Transistors used is left to the circuit designer and depends upon the particular safe—operating area required and the mounting and heat sinking configuration used.
Case D has been evaluated to volts RMS. Actual isolation rating depends on specific mounting position and maintaining required strike and creepage distances. Case Respectively Power Derating http: MJ — 1.
MJ — 0. MJ 3. MJ — 6. MJ fT 0.
DC Current Gain Figure 3. Switching Times Test Circuit Figure 7. Turn—Off Times Figure 9. MJ http: MJ Figure TJ pk is variable depending on power level. Power Derating Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Active Region Safe Operating Area http: MJ There are two limitations on the power handling ability of 20 a transistor: Collector Saturation Region 1. DC Current Gain 2.
Pulse Test: At high case temperatures. TC is vari- 0. DC Current Gain Figure 4. Collector—Saturation Region http: Rate 60 cps. Turn—On Time http: Thermal Response — 2N Switching Time Test Circuit Figure 5. TIME ms Figure 2.
Second 7. When using ON 2N 2. Figure 3. Capacitance 2. Collector Saturation Region http: DC Current Gain Figure 9. Turn—Off Time Figure 7. These devices can also be used in power switching circuits such as relay or solenoid drivers.
Preferred devices are ON Semiconductor recommended choices for future use and best overall value. See Figure 12 2 Pulse Test: Collector Saturation Region Figure Collector Saturation Region 2. DC Current Gain Figure Safe operating area curves indicate IC — VCE will reduce the power that can be handled to values less than limits of the transistor that must be observed for reliable the limitations imposed by second breakdown.
TC is variable depending on conditions. These high—performance plastic devices feature: The 3. Fall Time http: Storage Time Figure 7.
Active—Region Safe Operating Area 5. TIME ms Figure 4. TC is 1. Thermal Response 10 There are two limitations on the power handling ability of a transistor: Current Gain Figure 9. Collector Cut—Off Region Figure Temperature Coefficients http: Effects of Base—Emitter Resistance Figure All limits are applicable and must be observed.
Switching Time Equivalent Circuit Figure 3. Thermal Response 10 There are two limitations on the power handling ability of 7. Second breakdown 0. Forward Bias Safe Operating Area http: There are two limitations on the power handling ability of a transistor: Complement to PNP 2N IEBO — 1. Collector Cut—Off Region Figure 6.
Capacitance http: Temperature Coefficients RBE. Turn—On Time Figure Second breakdown pulse 0. Thermal Response http: Using the model and the device thermal response. Complement to NPN 2N At high—case temperatures. Jump to Page. Search inside document. Crispin Meneleo Valenzuela. Joab Max Apaza Martinez. Anonymous XoW23y58O. Borcan Cristi.
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